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Derive IM Effects From Solid-State Device Physics

L. Greco
Organization: Universita di Siena, Italy
Journal / Anthology

Microwaves & RF
Year: 1997
Issue: August
Page range: 96-106

Virtually every RF circuit or system design incorporates semiconductor devices such as mixers, diodes, switches, and amplifiers. To some extent, all of these devices exhibit nonlinear current-versus-voltage (I-V) characteristics. The effects of this nonlinearity in the frequency domain can be obtained by applying Fourier transformation to derive the device's power spectral density. This method was applied to a basic p-n junction diode using the Fourier-transform (FT) capability incorporated in the Mathematica software package from Wolfram Research (Champaign, IL).

*Engineering > Electrical Engineering