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Influence of Resistances on Characteristics of Vertically Integrated Resonant Tunelling Diodes

K. Fobelets
R. Vounckx
G. Borghs
Journal / Anthology

Electronics Letters
Year: 1993
Volume: 29
Issue: 1
Page range: 57-59

An equivalent circuit for vertically integrated resonant tunnelling diodes with different diode area is proposed. Vertical and horizontal current paths through the structure are characterized by resistances which explain the difference between the characteristics of a monolithically integrated and a discrete series connection.

*Engineering > Electrical Engineering

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